wafer.space Community

Well, so, let's start off with a "mild" complaint about the DRC deck, at least as far as I'd understand it to be:

5:27 p.m.

5:29 p.m.

to be clear, the step is 5nm and the sections are 0.32 um and 0.325 um.

Channel width is the other direction.

7:23 p.m.

Not that it justifies an error...

tnt

Channel width is the other direction.

Width is measured along the edge of "poly on comp"; length is measured normal to that edge.

tnt

Not that it justifies an error...

Yeah, I'm hoping to at least lay down a couple calibration gates to allow calibrating magic extraction and SPICE models for bent gates at least a week ahead of Run3's GDS deadline. Would be bad to have the DRC deck break that.

7:53 p.m.

Might as well post the writeup I did on one use case where bends would/might come up: https://www.tumblr.com/namibj/821872240790503424/rotationally-symmetric-pseudo-nmos-multiplexers

Untitled

Rotationally symmetric pseudo-NMOS multiplexers, part1: Overview

There are two main variants relevant in common bulk-CMOS processes: the 4:1 MUX, and the 8:1 MUX. I have a corner-pair (double-segment) of the 8:1 MUX drawn in KLayout for gf180mcuD, mostly as a POC and somewhat nicer visualization of the structure involved. Notably, I hven't dialed in the DRC-compliant Nplus implant for it, but that will pretty much just follow the COMP geometry; possibly pushing the active channel away from the 8 corners to meet minimum spacing where it runs into the channel; more on that later. I will also share a hand-drawn illustration of the 4:1 MUX, primarily for completeness though. ## Octagonal corner (the diagonal segment is the most complete; the vertical segment notably misses it's data line, and the horizontal segment skipped drawing how it's bottom-most gate will join up to the contact it shares with the other (not-drawn) diagonal segment it will be adjacent to):...

0.22 um min channel width is the minimal width of the diffusion for a transistor. i.e. the "W" of the transistor. the measurement you took correspond to the length L of the transistor and the min for that is 0.28um.

tnt

0.22 um min channel width is the minimal width of the diffusion for a transistor. i.e. the "W" of the transistor. the measurement you took correspond to the length L of the transistor and the min for that is 0.28um.

Oh that yeah; I meant the DRC highlight in bright yellow that was complained about being not wide enough.

@Tim Edwards Does this (m1 hidden) look like it should work effectively for calibrating how channel width is to be measured most accurately for extraction to work properly? I'd look forward to extending it by one or 2 contact pitches into an elongated shape to have a convenient linear shaped one for reference/calibrating against. This is specifically to check your way of calculating the BSIM4 instance parameters from the geometry.